摘要
用电子束蒸发沉积钛和40keV氮离子束轰击交替进行的办法合成了TiN薄膜。用RBS,AES,TEM,XPS,和X射线衍射研究TiN薄膜的组分和结构表明:用离子束增强沉积制备的TiN薄膜主要由TiN相构成;晶粒大小为30—40um,无择优取向;而非离子束轰击沉积的薄膜则是无定形的;用离子束增强沉积制备的TiN薄膜,其氧含量明显小于无离子束轰击薄膜的值;在TiN薄膜和衬底之间存在一个界面混合区,厚度为40um左右。机械性能测试表明,TiN薄膜具有高的显微硬度,低的摩擦系数。
The TiN film was synthesized by alternate deposition of Ti and nitro-gen ion bombardment under 40 keV at room temperature. The component depthprofiles and the structure of the film have been investigated by means of RBS,AES, TEM, XPS and X-ray diffraction. The results showed that the TiN films syn-thesized by ion beam enhanced deposition (IBED) are mainly composed of TiNcrystallites, sized about 30-40 nm, with random orientation. The oxygen contaminationin TiN film prepared by IBED is less than that of the deposited film without nitrogenion bombardment. It was confirmed that there is a significant intermixed layer, about40nm thick, at the interfaces. The films formed by IBED exhibit superior hardnessand improvement over the wear resistance and frictiton properties.
出处
《金属学报》
SCIE
EI
CAS
CSCD
北大核心
1990年第2期B130-B135,共6页
Acta Metallurgica Sinica
