摘要
本文利用ＥＣＲ－ＰＥＣＶＤ技术在不同沉积温度下制备了Ｓｉ３Ｎ４薄膜，利用Ｓｉ３Ｎ４薄膜的透射光强度曲线计算了Ｓｉ３Ｎ４薄膜的折射率和膜厚，计算结果与实测值符合较好。结果表明，随着沉积温度的提高，Ｓｉ３Ｎ４薄膜的折射率增大，致密性提高，Ｓｉ３Ｎ４薄膜厚度在６０ｍｍ直径范围内不均匀度小于５％。测定了Ｓｉ３Ｎ４薄膜的显微硬度。利用荧光分光光度计测定了Ｓｉ３Ｎ４薄膜的光致发光效应。初步进行了Ｓｉ３Ｎ４薄膜的超高频大功率晶体管器件中作为钝化膜的应用研究。
The Si3N4 thin films have been prepared by the ECR-PECVD technology under different deposition temperatures.The refractive index and thickness of the Si3N4 thin film have been calculated with the transmittance curve of the Si3N4 thin film,and the results agree with experimental measure.The results show that the density and refractive index increase with the increasing deposition temperature,the radial thickness nonuniformity of the Si3N4 thin film is about ±5% in the range of φ60mm.The microhardness has been measured.The photoluminescence effect of the Si3N4 thin film has been measured by the fluorescence spectrophotometer.The application of the passivation film of the superfrequency large power semiconducting transistor has been preliminarily investigated.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1996年第2期56-59,共4页
Acta Electronica Sinica
基金
国家自然科学基金
中科院重点研究课题
