摘要
由偏心静电单探针诊断了电子回旋共振等离子体增强化学汽相沉积（ＥＣＲＰＥＣＶＤ）反应室内等离子体密度的空间分布规律．结果表明在轴向位置Ｚ＝５０ｃｍ处，直径１２ｃｍ范围内等离子体密度分布非常均匀．分析了等离子体密度径向均匀性对沉积速率均匀性和薄膜厚度均匀性的影响．讨论了沉积制备一定薄膜厚度的Ｓｉ３Ｎ４薄膜的工艺重复性．研究了各种沉积工艺参数与Ｓｉ３Ｎ４薄膜沉积速率的相互关系．
Abstract The
spatial distribution of the ECR plasma density has been measured by using an eccentric
Langmuir probe.The result indicates that the plasma density is very uniform in the axis Z
=50cm and radial =12cm.Effect of the radial uniformity of plasma density on the uniformity
of deposition rate and thin film thickness is analyzed.The repeatability to prepare silicon nitride
thin film of a specified thickness is discussed.The relation of the deposition process with the
deposition rate of silicon nitride thin film is investigated and the dependence of the practical
application on process parameters has been obtained for the deposition thin film with ECR
PECVD technology.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第7期1309-1314,共6页
Acta Physica Sinica
基金
国家自然科学基金
广东省自然科学基金
