摘要
受电子器件芯片铝电极耐温性能的限制和钝化膜沉积工艺中高能粒子对芯片辐射损伤等因素的影响，一般的沉积方法难以用到要求较高的浅结器件的钝化工艺中。微波ECR-PCVD技术没有高能粒子对芯片的辐射损伤，可以在较低的温度条件下沉积出均匀致密、性能优良的Si_3N_4薄膜，因而成为微电子器件沉积钝化膜的最佳工艺。
A microwave ECR-PCVD technology has been successfully developed to grow Si3N4 films, which can be used as an ideal passivation material with novel features in microelectronics devices packaging. The many advantages over conventional Si3N4 film powth technology were discussed, including highe quality Si3N4 film grown, lower growth temperathe,and no radiation damages of energetic particles to Al electrodes and to shallow junctions.
出处
《真空科学与技术》
CSCD
北大核心
1998年第1期72-75,共4页
Vacuum Science and Technology
基金
"九五"国家自然科学基金
关键词
电子回旋共振
薄膜
钝化
氮化硅
制备
Electron cyclotron resonance, Si_3N_4 thin film, Inactivation
