摘要
本文采用射频等离子体增强化学气相生长法（ＰＥＣＶＤ），在单晶硅衬底上生长氮化硅薄膜，经Ｘ射线衍射测试发现，在（１００）晶向硅片上生长的氮化硅薄膜为（１０１）晶向的外延生长膜。还用红外吸收光谱拉曼光谱和Ｘ射线光电子能谱测试了β－Ｓｉ３Ｎ４的特性，讨论了它在微电子学中的应用。
The silicon nitride films were deposited by plasma enhanced chemical vapour deposition.The result obtained by X ray diffraction indicated that the nitride silicon grew along(101) orientation on Si(100).In addition.The FTIR.Raman scattering and X ray photoelectron spectra were used to characterize silicon nitride. Its applications in microelectronics are also discussed.
出处
《材料科学与工程》
CSCD
1997年第1期46-49,共4页
Materials Science and Engineering
关键词
PECVD
外延生长
氮化硅
薄膜
β Si 3N 4 Plasma Enhanced Chemical Vapour deposition(PECVD),epitaxial growth
