摘要
报道了一种高增益高效率 S波段硅脉冲功率晶体管的研制结果。该器件在 f=2 .4～ 2 .6GHz,D=1 0 % ,τp=1 0 0 μs,Vc=36V条件下输出功率 1 0 0 W、增益 9d B、效率 50 %。在 f=2 .6GHz短脉宽条件下输出功率 1 60 W、增益 8.0 d B、效率 60 %。
This paper presents the manufacturing result of a S-band silicon pulsed power transistor with high G p and high η c. This transistor produces 100 Watts of output power with 9 dB of gain and 50% of collector efficiency in the operation conditions of f =2.4～2.6 GHz, D =10%, τ p=100 μs and V c=36 V and 160 Watts of output power with 8.0 dB of gain and 60% collector efficiency at f =2.6 GHz for short pulsed operation.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2000年第2期123-127,共5页
Research & Progress of SSE
关键词
硅
微波功率晶体管
S波段
silicon
microwave power transistor
polysilicon emitter
dynamic ballast resistors
