摘要
报道了L波段高端中脉冲250W宽带硅微波脉冲大功率晶体管研制结果．该器件采用微波功率管环台面集电极结终端结构、非线性镇流电阻等新工艺技术，器件在1．46～1．66GHz频带内，脉宽200μs，占空比10％和40V工作电压下，全带内脉冲输出功率大于250W，功率增益大于7．0dB，效率大于45％．
Using novel technologies such as the mesa junction termination structure with one guard ring and a nonlinear blasting resistor of microwave power transistors, a high L-band medium silicon pulse power transistor has been developed. Under 40V supply volt- age,internally matched devices cover the frequency for high L-band radar applications from 1.46～ 1.66GHz with a pulsed output power of 250W and 45% collector efficiency. The gain is more than 7. 0dB.
关键词
硅
微波
功率管
silicon
microwave
power transistor
