摘要
叙述了一种制作双极型晶体管的T形电极结构自对准工艺。利用该工艺已研制成微波T形电极晶体管(TSET)。最高振荡频率为10GHz,截止频率为6GHz;在3.2GHz下,输出功率1.1W,功率增益6dB。
A self-aligned technology for bipolar transistor with a T shape elec-trode structure has been proposed. Microwave TSET has been fabricated with 10 GHz maximum oscillation frequency and 6 GHz out-off frequency. The transistor has1.1 W output power and 6 dB power gain at 3. 2 GHz.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1993年第2期129-134,共6页
Research & Progress of SSE
关键词
双极型晶体管
T形电极
工艺
Microwave Bipolar Transistor,T Shape Electrode,Self-Aligned
