摘要
与时间相关电介质击穿 (TDDB)测量是评估厚度小于 2 0nm薄栅介质层质量的重要方法 .氧化层击穿前 ,隧穿电子和空穴在氧化层中或界面附近产生陷阱、界面态 ,当陷阱密度超过临界平均值 ρbd时 ,发生击穿 .击穿电量Qbd值表征了介质层的质量 .Qbd值及其失效统计分布与测试电流密度、电场强度、温度及氧化层面积等有定量关系 .TDDB的早期失效分布可以反映工艺引入的缺陷 .TDDB可以直接评估氧化、氮化、清洗、刻蚀等工艺对厚度小于 10nm的栅介质质量的影响 .它是硅片级评估可靠性和预测EEPROM擦写次数的重要方法 .
Time Dependant Dielectric Breakdown measurement is an important method of evaluating the quality of thin dielectric films with less than 20nm thickness.Tunneling electrons and holes generate a lot of traps and interface states,which cause dielectric breakdown when critical average trap density bd is reached. Q bd value characterizes the quality of thin films.The qualitative relations of Q bd with current density,electric field,temperature and gate oxide area are given.The early failure distribution of TDDB reflects defects caused by IC processing.TDDB measurement is used to evaluate the influence of oxidation, nitridation,clean chemistries and plasma etching processes.It is a powerful wafer level reliability evaluation method and can be used to predict the endurance of EEPROMs.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2000年第5期80-83,74,共5页
Acta Electronica Sinica
