摘要
通过比较经过和未经过等离子暴露的两种薄栅氧化硅层在恒电流条件下击穿时间 tbd的差 异，计算出在等离子体暴露过程中由充电效应导致的隧穿电流在天线比为 2000的 MOS电容栅氧 化硅层中产生的陷阱密度为 2.35× 1018cm-3，表明充电效应导致损伤的出现。
The trap density generated by tunneling current during plasma exposure is caculated by com－paring the difference of time-to-breakdown (tbd) between no-plasma-exposure gate oxide and plasma－exposure gate oxide. The results show that the trap density generated in silicon oxide by plasma charging is 2.35× 1018cm-3.
出处
《功能材料与器件学报》
CAS
CSCD
2001年第1期59-62,共4页
Journal of Functional Materials and Devices
