摘要
随着超大规模集成电路的不断发展,薄栅氧化层的质量对器件和电路的可靠性的作用越来越重要。经时绝缘击穿(TDDB)是评价薄栅氧化层质量的重要方法。本次实验主要是通过斜坡电压实验来研究薄栅氧化层的TDDB,测出斜坡电压时氧化层的击穿电压、击穿电荷以及击穿时间,研究了斜坡电压情况下,栅氧化层击穿电荷、击穿电压和外加电压斜率等击穿参数间的依赖关系。
With the development of very large scale integrated circuit （VLSI）, the quality of thin gate oxide plays a very important role in the reliability of devices and circuits. TDDB（time-dependent dielectric breakdown） is a key method to value the quality of thin gate oxide. The breakdown characteristics of thin gate oxide based on 0. 5μm technology are studied under the ramped voltage accelerated testing; the relations of the charge-to-breakdown, voltage-to-breakdown and the slope of the voltage are discussed.
出处
《电子器件》
EI
CAS
2006年第3期624-626,634,共4页
Chinese Journal of Electron Devices
基金
电子元器件可靠性物理及其应用技术国家级重点实验室基金资助(51433030203JW091)
关键词
薄栅氧化物
TDDB
斜坡电压法
击穿参数
thin gate oxide
TDDB
voltage ramp test
the parameters of breakdown
