摘要
采用硅片直接键合(SDB)工艺代替传统的外延工艺制备出材料片,并将其应用于VD MOSFET器件的研制。实验结果表明,采用SDB硅片制造出的器件,其电学特性优于采用外延片制作出的器件。
Silicon wafers are prepared using silicon direct bonding (SDB) technology, which are used for the development of VDMOSFET's. Experimental results indicate that VDMOSFET's based on SDB wafers have better electrical performances than those based on epitaxial substrates.
出处
《微电子学》
CAS
CSCD
北大核心
2004年第2期215-216,共2页
Microelectronics
