摘要
本文建立了通过二氧化硅层扩散到硅中的杂质浓度分布的数学模型。并通过对模型所归结的两个偏微分方程定解问题的求解，得到了在这种情况下杂质浓度分布规律的解析表达式。
In this paper, a mathematical model of the density distribution of theforeign matter spread a layer of Si through a thin layer of SiO is built up. We obtain ananalytie expression about the law of the density distribution such being case, by solving twodefining solution problems of partial diffferential equation that has been sumed up.
出处
《云南师范大学学报（自然科学版）》
1996年第1期7-13,共7页
Journal of Yunnan Normal University:Natural Sciences Edition
关键词
杂质
二氧化硅
数学模型
扩散
硅
浓度分布
foreign matter SiO_2 spread density mathematical model analytic expression
