摘要
本文介绍了利用硅片直接键合（ＳＤＢ）技术代替三重扩散，生产ＤＫ５５双极功率器件。实验说明，ＳＤＢ片代替三重扩散无需高温长时间的扩散，由于衬底质量好，器件特性得到提高，工艺过程中碎片率减少，生产效率提高。
The fabrication DK_(55) of bipolar power device replacing the triodiffusion with thesilicon wafer direct bonding(SDB )technique is described in this paper. The exporiment indicatesthat the SDB do not need higher─temporature and longer─time diffuson,The characteristics ofdevice are impreved becuse of Substrate of high quality,The passibility of breaking the wafer topieces Can be decreased in processes,The productive efficiency couldbe. EEACC:2550,2570.2550B
出处
《电子器件》
CAS
1995年第2期86-89,共4页
Chinese Journal of Electron Devices
