摘要
研究成功用Ⅳ族元素锗进行硅／硅键合的一整套新技术（代替通用的亲水法）；实现了键合层无孔洞， 边沿键合率达９８％ 以上， 键合强度达２１５６ Ｐａ 以上， 并通过在锗中掺入与低阻同型号的杂质， 实现了应力补偿。
Abstract: A new set of technique was fulfilled in which the bonding of Si Si by using Ge(Ⅳ element) as the substitute for the common hydrophilic method. The bond layer has no holes, and the edge bond rate amounts to above 98%, and the bond strength is above 220 kg/cm 2. By doping the same kind dopant with low resistance, realizes the stress compensation.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2000年第1期16-20,共5页
Chinese Journal of Rare Metals
