摘要
本文探讨了新型功率器件ＭＣＴ（ＭＯＳ控制晶闸管）的电参数设计和工艺设计，通过计算机模拟，采用ＳＤＢ（硅片直接键合）材料，在实验室制成了ＮＭＣＴ样品。测试结果表明，在－１２Ｖ的栅偏压下能在５μｓ内关断４２Ａ／ｃｍ２的阳极电流。
This paper deals with a new MCT (MOS controlled thyristor) power device including the parameter and process design and the experimental results. Based on the computer process simulation, the MCT samples were fabricated by using SDB(silicon direct bonding).Measurement results show that the anode current of 42A/cm2 can be cutoff in 5μs at the gate bias of -12V.
出处
《微电子学与计算机》
CSCD
北大核心
1995年第2期54-55,共2页
Microelectronics & Computer
