摘要
采用等离子化学气相淀积方法 ,改变 Si H4 和 N2 O的流量比制备含有不同氧浓度的 a- Si∶ H,O薄膜 .用离子注入方法掺入铒 ,经 30 0— 935℃快速热退火 ,在波长 1 .54μm处观察到很强的室温光致发光 .氧的加入可以大大提高铒离子的发光强度 ,并且发光强度随氧含量的变化有一个类似于高斯曲线的分布关系 ,不是单调地随氧含量的增加而增强 .研究了掺铒 a- Si∶ H,O薄膜和微结构 ,讨论了发光强度与薄膜微结构的关系 .
Amorphous Si∶H,O films with oxygen concentrations in the range of 1<O/Si<2 were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique using pure SiH 4 and N 2O mixture. Erbium was implanted at 500keV with a dose of 2×10 15 /cm 2 Annealing temperatures range from 300 to 935℃. Intense photoluminescence can be observed around 1 54μm at room temperature. There is a quasi gauss line between the PL intensity and oxygen concentration. The ideal photoluminescence intensity is due to the films, whose O/Si is between 1 and 1 76. The Er luminescence strongly depends on the a Si∶H,O microstructure, with their relation having been presented. The mechanism conerned in the optically activated light emission was also been discussed.
基金
国家重点基础研究发展规划和国家自然科学基金资助项目!项目号 :6963 60 4 0
699760 2 8&&
