摘要
使用质子Ｈ￣＋和聚焦Ｇａ￣＋离子束方法，在ＧａＡｓ／ＡｌＧａＡｓ量子阱材料上制备半导体一维量子线。通过低温阴极射线发光谱和光致发光谱，测量了由于Ａｌ从ＡｌＧａＡｓ势垒向ＧａＡｓ量子阱内扩散导致的发光谱峰的兰移，并讨论上述两种离子注入方法各具有的特点及不同的结果。
The method of H￣+and focused Ga￣+ ion beam implantation followed by rapidthermal annealing was used to make the quantum wire in GaAs/AlGaAs quantum well structure。From the low tempreture CL and PL spectra,the spectra peak blue shift caused by the Al inter。diffusion from the barrier to quantum well was measured and the characteristics of those twokinds ions implantatlon were discussed.
出处
《厦门大学学报（自然科学版）》
CAS
CSCD
北大核心
1995年第4期542-546,共5页
Journal of Xiamen University：Natural Science
关键词
离子注入
快速退火
量子线
半导体
Ion implantation,Rapid thermal annealing,Quantum wire
