摘要
铒离子在硅中呈现弱施主特性 ,O、Er双掺杂可提高施主浓度两个数量级 .氧杂质与铒离子形成复合体 ,其施主能级可能是铒离子发光能量转换的重要通道 .提出了掺铒硅光致发光激子传递能量模型 ,建立了发光动力学速率方程 ,并进行了详细推导 .发光效率与光激活铒离子浓度、激发态寿命及自发辐射寿命等因素有关 .指出铒离子 -束缚激子复合体的热离化和激发态铒离子能量反向传递是引起铒离子发光温度猝灭的主要原因 .拟合 PL测量实验结果表明 :它们对应的激活能分别为 6.6me V和 47.4me V.
Erbium implanted silicon was treated by lamp\|heating rapid thermal annealing (RTA). An exciton\|mediated energy transfer model in erbium\|doped silicon is presented. The emission intensity is related to optical active erbium concentration, lifetime of excited Er 3+ ion and spontaneous emission time. The thermal quenching of the erbium luminescence in Si is caused by thermal ionization of erbium bound exciton complex and nonradiative energy backtransfer processes, which correspond to the activation energy of 6 6 meV and 47 4 meV, respectively.
基金
国家自然科学重大基金项目 !( No.698962 60 )
重点基金项目!( No.6988970 1 )
关键词
激子传递能量
光致发光
掺饵
硅
Energy Transfer of Excitons, Photoluminescence, Erbium Doped Silicon
