摘要
采用Ta2O5／SiO2，Ta2O5／Al2O3复合介质层制备出低压驱动ZnS：Mn薄膜电致发光器件，它的阈值电压在40V以下。当驱动电压为60V，频率为50Hz时，发光亮度在200cd／m2以上，发光层中平均电场强度为105V／cm数量级。这种器件具有其独特的亮度—电压特性、频率特性和电荷存储量—电压特性。这种器件的亮度—电压特性与其复合介质层的电导性质密切相关，而与发光层厚度关系不大。实验分析表明复合介质层的电导性质是获得低压驱动薄膜电致发光器件的关键。
Low-voltage-driven thin film electroluminescent devices are obtained by using stacked inSulator SiO2/Ta2O5 and Al2O3/Ta2O5. Its threshold voltage is below 40 V. The brightness is above 200 cd/m2 at 50 Hz voltage of 60 V,and the average strength of the electrical field across the phosphor is 105 V/cm level. The characteristics of brightness-voltage (B-V) curve and integrated charge-voltage(Q-V)figtlre are different from those of the usLlal one. It is discovered that the B-V characteristics is with relation to the electroconductibility of the stacked insulators, but not in close relationship with the thickness of the phosphor. It is considered that the electroconductibility of the stacked insulator is the key of low-voltage-driven thin film electroluminescence.
出处
《光电子技术》
CAS
1995年第4期280-284,共5页
Optoelectronic Technology
关键词
电致发光
薄膜
低压驱动
复合介质层
electroluminescence, thin-film electroluminescent device, low-voltage-driven,stacked insulator
