摘要
利用金属蒸气真空弧 (MEVVA)离子源将 Si和 Er离子双注入到不同厚度热氧化 Si O2 / Si薄膜中获得 Er掺杂硅基发光薄膜 .掺杂到热氧化 Si O2 / Si薄膜表面的 Er原子浓度可达到～ 10 % ,即体浓度～ 10 2 1 cm- 3 .热氧化 Si O2膜越厚 ,溅射后 Si O2 保留量越多 ;再结晶硅颗粒结晶程度提高 ,逐渐纳米化 ;未见有大量的 Er偏析或铒硅化物形成 ,Er大部分以固溶形式存在 .在 77K下获得了较强 1.5 4μm光致发光信号 。
Si plus Er dual implanted thermal SiO 2 thin films on Si wafer are synthesized by using Metal Vapor Vacuum Arc (MEVVA) ion implanter.Er concentration in the surface of these samples is attained to be ～10%,which corresponds to the level of ～10 21 cm -3 and is much higher than that in the samples fabricated by using methods,such as high energy ion implantation and molecular beam epitaxy,etc.The remains of SiO 2 thin film increases with the thickness of thermal film increasing.The RHEED and AFM results show that Si is gradually nano crystallized in the course of recrystallization;while few Er segregation or precipitation are found to be formed during the rapid thermal annealing.1 54μm light emitting signals in these samples are obtained at 77K and room temperature (RT),respectively.The 1 54μm signals at RT do not decrease obviously.
基金
国家自然科学基金 (批准号 :6 976 6 0 0 1)
复旦大学应用表面物理国家重点实验室基金资助项目~~
关键词
双注入
掺铒硅
光致发光
表面结构
二氧化硅
薄膜
MEVVA ion source
dual implantation
erbium doped silicon
photoluminescence
