摘要
本文研究了雪崩热电子注入对快速热氮化的SiO_zN_y膜体内电子陷阱和界面陷阱的影响.结果表明:快速热氮化的SiO_xN_y膜存在着不同类型的陷阱,其陷阱密度悬殊很大.雪崩热电子注入过程中在Si/SiO_xN_y界面上产生两类性质不同的快界面态陷阱.同时还给出这两种陷阱在禁带中的能级位置,界面态密度随雪崩注入的变化关系.文中并对实验结果进行讨论与分析.
The effects of avalanche hot-electron injection on trapping of bulk electron and interfacestate of rapid thermal nitrided SiO_xN_y film are studied The results show that the differentkinds of trap exist in the rapid thermal nitrided SiO_xN_y dielectric films,and the trap densitiesare different markedly.In the course of the avalanche hot-electron injection, two kinds of fastinterface state traps with different properties are generated in Si/SiO_xN_y interface.The posi-tions of the traps in forbidden band and the change of the interface state density with avalan-che injection are given.The experimental results are also discussed.
