摘要
本文研究热氮氧化硅(SiO_xN_y)薄膜在高场下的电子陷阱和被陷电子的释放。发现:当样品被氮化的程度较轻时,膜中的有效电子陷阱表面浓度随着样品被氮化时间的增加而迅速增加,被陷电子的释放率近于零,与样品被短路的时间及外加反向电场的持续时间和大小(直到8MV/cm)无关,电子陷阱能级是较深的;当样品被氮化的程度较重时,随着对样品氮化时间的进一步增加,膜中的有效电子陷阱表面浓度逐渐减小,电子陷阱能级深度逐渐变浅,被陷电子的释放率逐渐增加,并与外加反向电场和外加反向电场的持续时间近似指数关系,几乎与样品被短路的时间无关。
The electron trapping at high-field and detrapping in thin thermally nitrided silicon oxide (SiO_xN_y) films are studied in the present work. It is observed that when the nitridation degree is the lighter, with the increasing of the nirridation time the effective electron trap surface concentration in the films increases rapidly, and the detrapping ratio of trapped electrons is almost zero and independent of the shorting time for samples and the strength (until 8MV/cm) and duration of application of external reverse field, and the depth of the electron trap level is the deeper; when the nitridation degree is the heavier with the further increasing of the nitridation time the effective electron trap surface concentration decreases and the depth of electron trap level becomes shallow gradually, and the detrapping ratio of trapped electrons gradually increases and is approximately dependent exponentially on the strength and duration of time application of external reverse field and is almost independent of the shorting time for the samples.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1991年第11期1855-1861,共7页
Acta Physica Sinica
基金
国家自然科学基金
Croncher基金
香港大学Strategic Research Grant部分资助的课题
