摘要
采用俄歇电子能谱和红外吸收光谱分析PECVD法低温形成SiOxNy薄介质膜的微观组分及其与制膜工艺间关系,通过椭圆偏振技术测试该薄膜的物理光学性能。
The microscopical composition and relationship in the composition to fabricated filmprocess of SiOxNy thin dielectric film formed by low temperature PECVD were analysed with AESand infrared absorption spectra. The physical and optical properties of the thin film were measuredby ellipsometer.
出处
《半导体技术》
CAS
CSCD
北大核心
2002年第7期73-76,共4页
Semiconductor Technology
基金
广东省自然科学基金资助项目
