摘要
本文主要研究了超薄快速热氮化(Rapid Thermal Nitridation)SiO_2膜在高电场下的电特性和抗辐照特性,采用AES和XPS等技术分析了RTN SiO_2膜的成份和结构。与同厚SiO_2膜相比,RTN SiO_2膜具有许多明显的优点,在同样条件下,当电场强度E≈1.5×10~7V/cm时,击穿时间t_(bd)比SiO_2的约高两个量级;在经过剂量高达10~7rad的Co^(60)辐照后,SiO_2膜的界面态密度及漏电流均增大1—2个量级,而RTN SiO_2膜的变化非常小。
The characteristics of the ultra-thin (10nm) Rapid Thermal Nitrided SiO_2 films underhigh electric field stress are studied.The composition and structure of RTN SiO_2 film havebeen analysed by means of AES and XPS.A new technique to obtain the ultra-thin RTNSiO_2 films with high quality is presented.The RTN SiO_2 films have many advantages in comparisonwith the SiO_2 films of the same thickness.The breakdown time t_(hd) of the film at thehigh electric field of 1.5×10~7 V/cm is about two orders of magnitude higher than that ofSiO_2, which are stressed under the same conditions. With conventional SiO_2 film, the irradiationof Co^(60) upto 10~6 and 10~7 rad increases the interface state density and leakage current by1-2 orders of magnitude, while with the RTN SiO_2 films the changes are very small.
关键词
SIO2膜
热氮化
电子陷阱
击穿时间
Rapid thermal nitridation
Electron trap
High electic field
Breakdown time
Density of interface state
irradiation
