摘要
对于快速热氮化（ＲＴＮ）的ＳｉＯｘＮｙ薄膜（ＲＴＮＦ），本文不仅采用Ｂ－Ｔ处理高频Ｃ－Ｖ测试研究了它的电荷特性，而且还借用椭圆偏振谱技术和俄歇电子能谱分析研究了它的光学性质和微结构组分，同时还讨论了电学特性与光学性质间的相关性．实验结果表明：氮化后再氧化退火是减少ＲＴＮＦ中固定电荷的有效途径，结合Ｂ－Ｔ处理高频Ｃ－Ｖ测试技术仍适用于这种薄膜中碱金属可动离子密度的测量．研究结果还给出：类似于禁带中央界面陷阱密度，该薄膜折射率随氮化时间呈现出“回转效应”变化关系．测试分析结果并初步提出一个直接与膜的微结构组分相关的多层膜模型，文中还对实验结果进行了分析和讨论．
Abstract This paper not only studies the charge characteristic of thin rapid thermal nitride (RTN) SiOxNy dielectric film by the high frequency (HF) C-V measurement under temperature bias (B-T) processing, but also investigates the optical property and microstructure composition of thin RTN SiOxNy film (RTNF) with the spectroscopic ellipsometry and Auger Electron Spectroscopy(AES), discusses the correlation between electrical characteristic and optical property. The experimental results show that Nitrided Reoxidation Annealing is effective on reducing the fixed charge density of the thin RTNF.Combining B-T processing, the HF C-V technique still suited the density measurement of sodium alkaline metal mobile ion in the RTNF. The reasearch results show that:similar to midgap interface trap density, the correlation of refractive index of the RTNF with nitridation time presents 'turnaround effect'. The measurement analysis results put forward preliminarily a multilayer film model which has a direct bearing on microstructure composition of the thin RTNF. Some analyses and discussions of these experimental results are also made.
基金
国家自然科学基金
香港裘槎基金
