摘要
在恒流应力条件下测试了薄栅氧化层的击穿特性，研究了ＴＤＤＢ的击穿机理，讨论了栅氧化层面积对击穿特性的影响．对相关击穿电荷ＱＢＤ进行了实验测试和分析，研究结果表明：相关击穿电荷ＱＢＤ除了与氧化层质量有关外，还与应力电流密度以及栅氧化层面积强相关．得出了ＱＢＤ的解析表达式。
Breakdown characteristics of thin gate oxide are tested under constant current stresses, breakdown theories of TDDB are researched and effects from area of gate oxide to breakdown characteristics are discussed. The charge to breakdown Q BD is tested and the results show: the charge to breakdown Q BD is dependent on stressed current density and area of gate oxide. An analytical expression of Q BD is educed and relative parameters are fitted.
基金
国防科技电子预研资助项目
关键词
击穿
薄栅
氧化层
集成电路
VLSI
Breakdown, Gate Oxide, Experrment Determinat, Time Dependent Dielectric Breakdown
