摘要
本文通过衬底热电子SHE(Substratehotelectron)注入技术 ,对SHE增强的薄SiO2 层击穿特性进行了研究 .实验发现氧化层中的平均电子能量与衬底电压有很大的关系 .通过能量守恒方程计算注入到氧化层中的平均电子能量 ,根据计算出的电子能量可以解释SHE注入和F N隧穿注入的根本不同 .本文提出了衬底热电子增强的TDDB(Timedependentdielectricbreakdown)模型 .
SHE (Substrate hot electron) enhanced breakdown characteristics of thin SiO2 are investigated by using SHE injection techniques. These experiments reveal that the average electron energy in the oxide depends on substrate voltage strongly. The average electron energy injected into oxide can be calculated by using the energy-conservation equation. The difference between SHE injection and F-N tunneling can be explained in terms of the calculated electron energy. A SHE enhanced TDDB (time dependent dielectric breakdown) model is presented.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2001年第11期1468-1470,共3页
Acta Electronica Sinica
基金
国家九五国防预研项目 (No.8.5 .4 .3)
关键词
集成电路
衬底热电子增强
击穿电荷
二氧化硅
Calculations
Electron energy levels
Energy conservation
MOSFET devices
Silicon compounds
Substrates
Thin film transistors
