摘要
对注FMOSFET和CC4007电路进行了60Co－γ辐照和退火行为的分析研究，结果表明：栅介质中F的引入，能明显减小CC4007电路辐射感生阈电压的漂移和静态漏电流的增长；抑制高温贮藏引起的CC4007电路漏电流的退化，减小辐射感生氧化物电荷和界面态在退火过程中的再生长速度．F－Si键的形成将减小MOS栅氧介质的电导率．
The character of 60Co-γ irradiation and annealing in fluorine implanted CC4007 CMOS circuits and MOSFETs has been investigated. Experimental results have shown that radiation-induced shift of the threshold voltage and corresponding increase of static supply current in CC4007 circuits can be explicitly restrained by introducing minute amounts of fluorine ions into gate oxides. The more increase of static supply current induced by high temperature storage occurs in MOSFET and it controlled by implantation.The formation of F-Si bonds will reduce the conductivity of MOS gate oxides.
关键词
MOS器件
可靠性
注入
氟
Fluorine
Irradiation
MOSFET devices
Reliability
