摘要
栅氧化层厚度的减薄要求深入研究薄栅介质的击穿和退化之间的关系 .利用衬底热空穴注入技术分别控制注入到薄栅氧化层中的热电子和空穴量 ,对相关击穿电荷进行了测试和研究 .结果表明薄栅氧化层击穿的限制因素依赖于注入热电子量和空穴量的平衡 .提出薄栅氧化层的击穿是在注入的热电子和空穴的共同作用下发生的新观点 .建立了 Si O2
The scale of gate oxides thickness requires a detailed physical understanding of degradation and breakdown. Charge to breakdown of the thin gate oxides was tested and investigated by controlling the amounts of injected hot electrons and holes separately with substrate hot holes injection method. The results show that the limiting factor for thin gate oxides depends on the balance between the amounts of injected hot electrons and holes.It is reported that the cooperation of injected hot electrons and holes is necessary in thin gate oxides breakdown.A model of dielectric breakdown in SiO 2 has been proposed and theory analysis is also made.
基金
国防预研基金资助项目! (G982 5 741) .&&
关键词
VLSI
薄栅氧化层
击穿电荷量
集成电路
thin gate oxides
Substrate Hot Holes(SHH)
charge to breakdown
model
