摘要
用a -Si∶H薄膜经退火晶化成的多晶硅薄膜 ,其晶化温度、晶粒尺寸和电性能与薄膜的初始结构有密切关系 ,而a -Si∶H薄膜的初始结构依赖于沉积条件。用PCVD方法高速沉积的a -Si∶H薄膜 ,经 550℃的低温退火 ,可以制备平均晶粒尺寸为几百nm ,最大晶粒尺寸为 2 μm ,电导率为 1.6 2 (Ω·cm ) - 1 的优质多晶硅薄膜。
The origin structure of a-Si∶H films is closely related to the recrystallizaiton temperature,the grain size and electrical properties of polycrystalline silicon films,which were formed by recrystallization annealing of a-Si∶H films.While the origin structure of a-Si∶H films depends strongly on the deposition condition.The high quality polycrystalline silicon film with the mean grain size of several hundread nm,the largest grain size of 2μm and the dark conductivity of 1.62 (Ω·cm) -1 has been obtained through low annealing temperature of 550℃,the a-Si∶H films deposited at high rate by the PCVD method.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2000年第2期157-158,共2页
Journal of Functional Materials
关键词
多晶硅薄膜
衬底温度
掺杂比
晶化温度
晶粒尺寸
polycrystalline silicon film
substrate temperature
doping ralio
recrystallization temperature
grain size
