摘要
研究了以SiCl4/H2为气源、用等离子体增强化学气相沉积方法,在低于300℃温度下所制备的pc-Si薄膜在长时间的光照下电导率的变化情况。实验结果表明,所制备的多晶硅薄膜具有类稳恒光电导效应,而且薄膜的稳恒光电导特性依赖于薄膜的晶化率和晶粒尺寸,随晶化率的增加和晶粒尺寸的增大而增大。
The variance of the conductivity of pc-Si films has been investigated under illumination for long periods. These films are prepared under low-temperature of 300℃ by the plasma enhanced chemical vapor deposition technology from SiCl4/H2. The results of experiment indicate that the films have the characteristic as the persistent photoconductivity effect. The result also shows that the stability photoconductivity of the films is related to the crystalline fraction and the grain size of the films. The stability photoconductivity increases with the increasing on the crystalline fraction and the grain size.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2007年第5期711-713,共3页
Journal of Functional Materials
基金
国家重点基础研究发展规划资助项目(G2000028208)
关键词
多晶硅薄膜
稳恒光电导效应
晶化率
晶粒尺寸
polycrystalline silicon films
persistent photoconductivity effect
crystalline fraction
grain size
