摘要
射频辉光放电硅烷等离子体化学汽相沉积是制备氢化非晶硅薄膜的主要工艺技术。探测和控制等离子体参数是选取最佳工艺条件、制备优质薄膜的关键问题。Ｌａｎｇｍｕｉｒ探针是获得等离子体荷电参数的诊断技术。本文分析了探针诊断技术中的一大难题──中毒效应产生的原因，提出并验证了用加热探针抑制中毒效应的机理。理论分析和实验结果表明，探针被加热升温到２００℃时，其中毒效应完全得到了抑制。
Plasma chemical vapor deposition in silane radio frequency glow discharge is a main fabrication technology of hydrogenated amorphous silicon(a-Si:H)films.Diagnosis and control of the plasma parameters are a key problem for searching the optirnum technology conditions and obtaining an a-Si:H film with excellent quality.Langmuir probe is a diagnostic technique of charged parameters in plasma.In this paper,the cause of probe contaminant effect,which is a troublesome problem in probe diagnostic procedures, is analyzed.The physical mechanism of restraining contaminant effect by means of heating the probe is proposed and verified.The theoretical analyses and experimental result demonstrate that the probe contaminant effect can be restrained almost completely when the probe is heated to the temprature of about 200℃.
出处
《功能材料》
EI
CAS
CSCD
1996年第5期392-395,共4页
Journal of Functional Materials
基金
国家自然科学基金
关键词
射频
辉光放电
硅烷
等离子体诊断
L-探针
radio frequency glow discharge
silane plasma
Langmuir probe
contaminant effect
