摘要
利用ＰＥＣＶＤ方法及后处理工艺制备了具有室温可见光区光致发光效应的纳米晶硅（ｎ－Ｓｉ／ＳｉＯ２）薄膜材料，对其光吸收，光能隙以及电导率等特性参数进行了测试研究。发现该薄膜的可见光区吸收比ＰＥＣＶＥ方法制备的微晶硅，非晶硅等薄膜的光吸收明显减弱，且光能隙增大。而电导率则大大提高，达到１０－１－１０－３ｃｍ－１Ω－１的量级。该材料光学性能的变化可用量子尺寸效应进行定性解释，但其电导率的大幅度增加还有待进一步的研究。
nc-Si/SiO2 films prepared from Si films through the processes of PECVD technique with after treatment have room-temperature photoluminescence. Their optical absorptance , optical gap and electric conductivity were measured. It was found that their absorptance in visible range is much smaller than that of hydrogenated amorphous sili- con (a-Si : H) and that of microcrystalline silicon ( c-Si:H) , whereas the optical gap be- comes larger and their conductivity increases greatly , up to the magnitude of 10-1 - 10-3 cm-1 -1. The changes in optical features can be explained qualitatively by the quantum size effect , but the increase in conductivity requires detail study.
出处
《汕头大学学报（自然科学版）》
1997年第1期49-52,共4页
Journal of Shantou University：Natural Science Edition
关键词
纳米硅
光电特性
硅
半导体
光致发光
nanometer crystalline silicon
photoelectric charactristic
