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As^+、B^+离子注入硅的结构和摩擦学性能 被引量:1

Structure and Tribological Properties of Silicon with As^+and B^+Implantation
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摘要 利用XRD、XPS、AES分析了As+、B+离子注入后的硅的表面成分、结构和化学状态,并通过AFM/FFM和SRV实验测量了As+、B+离子注入硅的微观摩擦和宏观摩擦磨损性能。结果表明,As+、B+离子注入后,单晶硅表面仍呈晶态,表面粘着力、微观及宏观摩擦系数增大,同时耐磨损能力增强。微观与宏观摩擦磨损特性的规律基本一致。 The single crystalline silicon which is used in micro-electro mechanical system and integrated circuit was implanted with As+ and B+ ions. The composition, structure, chemical bond were determined by AES, XPS and XRD methods. The micro and macro tribological properties were investigated by AFM/FFM and SRV tester. The surface of silicon after ion implantation remains crystalline state. The surface adhesive force,friction coefficient of silicon with As+ and B+ ions implantation are larger than that without implantation. The wear resistance of silicon is greatly improved.The characteristics of microtribological behavior of silicon with and without ion implantation is the same as its macro-tribological behavior.
出处 《机械工程材料》 CAS CSCD 北大核心 1998年第5期10-13,16,共5页 Materials For Mechanical Engineering
基金 国家自然科学基金 中国博士后科学基金
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