摘要
B^+注入n(Si)-GaAs层,可以在带间引入与损伤相关的深能级,补偿自由电子,使n型导电层变为高阻层。若注B后退火,在一定的退火条件下,在GRAs晶格的恢复过程中,B占据Ga的位置,形成B_(Ga),并与As空位V_(As)络合形成络合物B_(Ga)V_(As)。由于B_(Ga)V_(As)和Si的相互作用,促使Si占据As的位置,形成受主,从而降低了n(Si)-GaAs层中的载流子浓度。我们认为B注入n(Si)-GaAs层光发光测量中观察到的1.33 eV峰与B,Si相关。
B^+ implantation into n (Si)-GaAs can create midgap, damagerelated leculs which compensate the free carriers in the material and make the n-type GaAs layer change into a high reeistivity layer. During the postimplantation annealing, B may occupy a Ga site, and a vacancy is created on an As site, so that a B_(Ga)V_(As) complex is formed. The B_(Ga) V_(As) complex reacts with Si, and gives rise to an increase in the occupancy of the Si atoms on the As sites. Then, an acceptor is formed. It is suggested that 1.33eV line in the PL spectrum is attributed to these defects like B_(Ga) and Si_(As).
出处
《北京师范大学学报（自然科学版）》
CAS
CSCD
1992年第4期472-477,共6页
Journal of Beijing Normal University(Natural Science)
基金
国家自然科学基金
中国科学院半导体研究所材料开放实验室资助项目
关键词
离子注入
砷化镓
硼离子
B^+ implantation
n(Si)-GaAs layer
B_(Ga) V_(As) complex donoracceptor compensation
photoluminescence
