摘要
用JGP560I型超高真空多功能磁控溅射仪在Si(111)衬底上制备了ZnO薄膜。采用X-Ray衍射仪和电子薄膜应力分布测试仪等对其微结构和应力进行了测试分析。研究结果表明,ZnO薄膜具有良好的c轴择优取向;随着薄膜厚度的增加,薄膜中的平均应力减少;膜厚为744 nm时平均应力、应力差均最小,分别为5.973×108Pa、6.159×108Pa,应力分布较均匀。
ZnO films deposited on Si（111） substrate were prepared by the magnetron sputtering method. The microstructure and stress distribution of the films were analyzed by the film stress distribution testing instrument and the X-ray diffractometer. The results indicate that the ZnO films possess c-axis preferred orientation. The mean stress in the ZnO films decreases with increasing of film thickness. When film thickness is 744 nm, the stress distribution is more uniform, the mean stress reaches its minimum 5. 973×10^8 Pa, and stress difference attains to its minimum 6. 159×10^8 Pa.
出处
《合肥工业大学学报（自然科学版）》
CAS
CSCD
北大核心
2007年第9期1117-1120,共4页
Journal of Hefei University of Technology：Natural Science
基金
国家自然科学基金资助项目(59972001)
安徽省自然科学基金资助项目(01044901)
安徽省教育厅科研基金资助项目(2004kj030)
安徽省人才专项基金资助项目(2004Z029)
安徽省信息材料与器件省级重点实验室资助项目
关键词
ZNO薄膜
射频磁控溅射
膜厚
微结构
ZnO thin film
RF magnetron sputtering
film thickness
microstructure
