期刊文献+

脉冲激光沉积(PLD)机理分析及其应用 被引量:4

Application and mechanism analysis of pulsed laser deposition
在线阅读 下载PDF
导出
摘要 脉冲激光沉积薄膜是近年来发展起来的使用范围最广,最有希望的制膜技术.该文阐述了脉冲激光沉积技术的机理、特点,薄膜生长主要包括三个过程:1)激光与物质相互作用产生等离子体;2)等离子体向基片扩散;3)等离子体中粒子在基片上生长薄膜.文章还分析了脉冲沉积过程中各主要沉积参数,如激光能量密度、沉积气压和衬底情况等对薄膜质量的影响,并介绍了其在制备半导体、高温超导、类金刚石、生物陶瓷薄膜等方面的应用. Pulsed laser deposition is the most widely-used and promising deposition technique for the growth of thin films developed in the recent years. In this paper, we have elaborated the mechanism and characteristics of pulsed laser deposition technique,the growth process of film includes:1) Plasma generation caused by light-material interaction;2) Plasma expansion towards substrate;3) Plasma recondensation on the substrate and growing thin films. Influence of the main deposition parameters such as energy density , deposition pressure and conditions of the substrate on the quality of thin films are investigated. We also have introduced its application in preparing semiconductor, high Tc superconductor, diomand and bioceramic thin films.
出处 《江西师范大学学报(自然科学版)》 CAS 北大核心 2005年第1期53-57,共5页 Journal of Jiangxi Normal University(Natural Science Edition)
  • 相关文献

参考文献14

二级参考文献60

  • 1[2]Tamura K, Ohomo A, Saikusa K, et al. Journal of Crastal Growth, 2000, 214/215: 59.
  • 2[3]Ryu Y R, Zhu S, Look D C, et al. Journal of Crastal Growth, 2000, 216: 330.
  • 3Li Jianguang, Ye Zhizhen, Wang Lei ,et al. Characterization of ZnO thin film treated with high temperature for buffer layer of GaN on silicon substrate. Chinese Journal of Semiconductors, 1999,20(10):862(in Chinese)
  • 4Nunesa P ,Malika A, Fernandesa B, et al. Vacuum, 1999,52 :45.
  • 5Studenikin S A, Golego N, Cocivera M. J Appl Phys, 2000,87:2413.
  • 6Ma Jin,Ji Feng,Li Shuying,et al. Effect of heat treatment on structure and electrical properties of zinc oxide films. Chinese Journal of Semiconductors, 1998,19 (6) : 472 (in Chinese)
  • 7Jiménez-González A, Suárez-Parra R. J Cryst Growth, 1996,167:649.
  • 8Gupta V, Mansingh A. J Appl Phys, 1996,80 : 1063.
  • 9Li Jianguang, Ye Zhizhen, Zhao Binghui, et al. Effect of temperature on the properties of ZnO thin films. Chinese Journal of Semiconductors, 199 6,17 (5) : 877 (in Chinese)
  • 10Maniv S, Westwood W D, Colombini E J. Vac Sci Technol,1982,20(2):162.

共引文献84

同被引文献39

  • 1高国棉,陈长乐,陈钊,李谭,王永仓,金克新,赵省贵.脉冲激光沉积(PLD)的研究动态与新发展[J].材料导报,2005,19(2):69-71. 被引量:5
  • 2李晓兰,郑赛珠,叶志清,邓海东,饶丰,熊志华.脉冲激光沉积系统(PLD)的应用[J].江西师范大学学报(自然科学版),2004,28(6):515-517. 被引量:4
  • 3何江.日本民用住宅太阳能发电新技术[J].广西科学院学报,1996,12(1):1-3. 被引量:1
  • 4[3]Singh R K,NarayanJ.Pulsed-laser evaporation technique for deposition of thin films:Physics and theoretical model[J].Phys Rev B,1990,41(13):8843-8859.
  • 5[5]Zhang Duanming,Li Zhihua,Guan Li,et.al.Dynamic simulation on the preparepation process of the ZnO thin films by pulsed laser[J].Science in China (Series A),2001,44(11):1485-1496.
  • 6[7]Singh R K,Narayan J.Pulsed-laser evaporation technique for deposition of thin films:physicas and theoretical model[J].Phys Rev B,1990,41(13):8 843-8 859.
  • 7Yah Changhao, Dai Honglib, Guo Chunfang, Lu Ping, Wang Wenxuan, Zhang Ming, Qiu Guanming. Synthesis and characterization of rare earth luminescent material based on PEN [ J ]. Journal of Rare Earths, 2007 25 ( S1 ) : 20.
  • 8Detavernier C, Van Meirhaeghe R L, Cardon F, Maex K. CoSi2 formation through SiO2 [J]. Thin Solid Films, 2001, 386 : 19.
  • 9Jia Tiekun, Wang Weimin, Long Fei, Fu Zhengyi, Wang Hao, Zhang Qingjie. Synthesis, characterization and luminescence properties of Y-doped and Tb-doped ZnO nanocrystals [ J ]. Materials Science and Engineering B, 2009, 162: 179.
  • 10Lidia Armelao, Monica Fabtizio, Silvia Gross, Alessandro Martucci, Eugenio Tondello. Molecularly interconnected SiO2GeO2 thin films: sol-gel synthesis and characterization [ J]. Journal of Materials Chemistry, 2000, 10: 1147.

引证文献4

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部