期刊文献+

一种用于电子薄膜导热系数和发射率测量的实验方案 被引量:3

METHOD OF DETERMINATION OF THERMAL CONDUCTIVITY AND EMISSIVITY OF ELECTRONIC THIN FILMS
在线阅读 下载PDF
导出
摘要 薄膜传热性能对微电子设备的传热能力及其性能和可靠性有重大影响 ,测量薄膜的热物性参数并进一步研究其影响因素 ,可为微电子电路的设计和发展提供科学依据。评述了薄膜导热系数测量和研究的现状 ,在此基础上提出了一种新的能同时测量衬底薄膜导热系数和发射率的实验方案 ,并通过建立衬底薄膜试样传热的数学模型和分析推导 ,论证了该实验方案的可行性。 The heat transferring performance of thin films governs the heat transfer characteristics, performance and reliability of the microelectronic devices in which they are used. Measurements of thermal properties of these thin films and further studies on their influence factors can provide the scientific basis for the design and development of microelectronic circuits. This paper reviews the state of the art of measurements and studies on thermal conductivity of thin films. Based on the fact that a new experimental method is presented which allows to measure the thermal conductivity and the emissivity of substrate foils simultaneously. Through founding the heat transfer mathematical models for the test samples of substrate foils and making analytical derivation, the feasibility of this method is demonstrated. The same properties can also be determined for extreme thin films deposited on the substrate foils. Furthermore, the influence of substrate foils on the whole heat transport effects can preferably be separated and the certainty of measurement can also be increased.
出处 《航空学报》 EI CAS CSCD 北大核心 2001年第3期227-230,共4页 Acta Aeronautica et Astronautica Sinica
基金 国家自然科学基金资助项目! (5 9976 0 0 4)
关键词 薄膜 热物性参数 导热系数 发射率 测量技术 集成电路 thin film thermal property thermal conductivity emissivity measuring method
  • 相关文献

参考文献3

  • 1张亚男,中国科学基金,1997年,11卷,5期,149页
  • 2黄信凡(译),电子薄膜科学,1997年
  • 3孔庆升,薄膜电子学,1994年

同被引文献15

  • 1范正修,汤雪飞.光学薄膜的温度场设计[J].光学学报,1995,15(4):463-467. 被引量:10
  • 2A Lakhsasi, H Pépin, A Skorek. Transient thermal stability of the X- ray mask SiC- W under short pulse irradiation[ J ]. Simulation Practice and Theory, 1997,5: 315 - 331.
  • 3Dz- Chi Li, Jeng- Tzong Chen, Shiang - Woei Chyuan, et al . Computer simulations for mask structure heating in X- ray lithography[J]. Computers & Structures, 1996,58(4) : 825 - 834.
  • 4K E Goodson. Solid layer thermal- conductivity measurement techniques[J ]. Applied Mechanics Reviews,1994,47(3) : 101 - 112.
  • 5Xiang Zhang, Costas P Grigoropoulos. Thermal conductivity end diffusivity of free- standing silicon nitride thin films[J]. Review of Scientific Instruments, 1995,66(2) :1115 - 1120.
  • 6G Feiertag, M Schmidt, A Schmidt. Thermoelasic deformations of masks for deep X- ray lithngraphy[J].Microelectronic Engineering, 1995,27: 513 - 516.
  • 7童志义.3D IC集成与硅通孔(TSV)互连[J].电子工业专用设备,2009,38(3):27-34. 被引量:29
  • 8Keith Cooper,Kathy Cook,Bill Whitney,Dietrich Toennies,Ralph Zoberbier,K.Joseph Kramer,Katrin Weilermann,Michael Jacobs.关于三维互连的光刻挑战和解决方案(英文)[J].电子工业专用设备,2009(5):21-29. 被引量:1
  • 9陈俊芳,王卫乡,刘颂豪,任兆杏.氮化硅薄膜的微结构[J].物理学报,1998,47(9):1529-1535. 被引量:12
  • 10谢常青,叶甜春,孙宝银,伊福廷.0.5μm分辨率同步辐射X射线光刻技术[J].微细加工技术,1999(3):32-34. 被引量:2

引证文献3

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部