摘要
氢化非晶硅(a-Si∶H)是一种重要的光敏感薄膜材料,其稳定性的好坏是决定能否应用于器件的重要因素之一。介绍了a-Si∶H薄膜稳定性的研究进展,论述了a-Si∶H薄膜的稳定性与Si-Si弱键的关系,分析了光致衰退效应(S-W效应)产生的几种机理,提出了在薄膜制备和后处理过程中消除或减少Si-Si弱键以提高a-Si∶H薄膜稳定性的方法。
The a-Si ： H thin film is an important light-sensitive material that has received significant attention nowadays because of its unique properties. The stability of this thin film is a key factor which is fatal in the application of commercial devices. This paper summarizes and commends some researches on the stability of a-Si ： H thin films based on recent literature, and discusses the relationship between the weak bonding of Si-Si and the stability of the films. It introduces the mechanisms of light-induced degeneration of a-Si ： H thin films and also recommends some methods of film fabrication and post-treatment techniques in order to reduce the weak bonding of Si-Si in a-Si ： H thin films.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2007年第5期21-24,共4页
Materials Reports
关键词
氢化非晶硅
稳定性
光致衰退效应
物理模型
稳定化处理
a-Si ： H, stability, light-induced degeneration, physical model, stabilization treatment
