摘要
1968年Ovshinsky在多元硫系薄膜中观察到电的开关与存贮效应以来 ,特别是 1975年氢化非晶Si的 p型与n型掺杂控制的实现 ,非晶半导体作为一个重要的电子材料 ,在过去的30多年中吸引了大量的基础研究并得到了广泛的应用。本文综述了至今为止非晶半导体重要的研究与应用进展 ,并探讨非晶半导体今后主要的发展趋势。
Since the current voltage characteristics of the threshold memory switch in chalcogenides have been observed by Ovshinsky at 1968, especially both n type and p type doping for hydrogenated amorphous silicon have been avaliable, as one kind of important electronic materials amorphous semiconductors in both fundamental research and application were remarkably developed over the past 30 years. Here, we shall present the dominant progress and then introduce the future problems of amorphous semiconductors.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2001年第4期348-352,共5页
Journal of Functional Materials
关键词
硫系非晶半导体
氢化非晶硅
电子材料
chalcogenide amorphous semiconductors
hydrogenated amorphous silicon
electronic materials
