摘要
详细研究了等离子增强型化学气相沉积(PECVD)制作的掺硼非晶硅薄膜电阻的电阻率随各种制备条件的变化特性和它的热电特性,制作出了高灵敏度的适于作室温红外探测器敏感元件的掺硼a-Si薄膜电阻。制作的非晶硅电阻室温300 K下的电阻温度系数(TCR)高达2.56%/℃,且制作工艺简单,与常规工艺兼容性好。
The dependence of a-Si resistor＇s resistivity on conditions of PECVD is described in detail,and thermoelectric characteristic of a-Si resistor is discussed. The a-Si resistor with high sensitivity,which is fit for uncooled infrared detectors, is successfully made. The temperature coefficient of resistor （TCR） for a-Si simple ,which can be well compatible resistor is 2.56 %/℃ at 300 K,and the fabrication process is with usual IC fabrication.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2006年第2期177-180,共4页
Semiconductor Optoelectronics
