摘要
首次采用双重肖特基势垒增强层技术，制作了ＩｎＧａＡｓ金属－半导体－金属光电探测器。实验结果表明：具有１５ｎｍ的ｐ－ＩｎＰ和１００ｎｍ的ＩｎＰ双重势垒增强层的器件，极大地减小了暗电流，最小达４．７ｎＡ（１０Ｖ）。
The InGaAs MSM photodetector with double Schottky barrier enhancement layers is investigated for the first time.The results show that dark current is greatly reduced in devices with 15 nm p-InP and 100 nm InP douple schottky enhanement layers,and lowerest dark current was 4.7 nA (10 V).It proves that it is the effective method to reduce the dark current of MSM-PD.
出处
《半导体光电》
CAS
CSCD
北大核心
1996年第3期257-260,共4页
Semiconductor Optoelectronics
基金
国家自然科学基金
关键词
半导体器件
光电探测器
双重势垒增强层
MOS
Semiconductor Device,Photodetector,Semiconductor Technology,Double Barrier Enhancement Layer
