摘要
无势垒增强型的金属—半导体—金属光电探测器（ＭＳＭ－ＰＤ）已有过理论分析［１］，而对具有完全晶格匹配势垒增强层的ＭＳＭ－ＰＤ则缺乏理论分析。文章将具有完全晶格匹配势垒增强层的ＭＳＭＰＤ简化为一维模型，并通过理论分析，得出了它的暗电流特性。其结果与实验的相符。
MSM-PD without a barrier-enhancement layer has been theoretically analyzed,while little analysis has been done on MSM-PD with a lattice-matched barrier enhancement layer.Dark current characteristics are given by virture of theoretical analysis on MSM-PD with a barrier-enhancement layer which is simulated by using a one-dimensional model.The result of the analysis is in good agreement with that of the experiments.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
1998年第1期12-15,共4页
Semiconductor Optoelectronics
基金
国家自然科学资助
关键词
光电器件
探测器
肖特基势垒
势垒增强层
Photoelectric Devices,Detector,Schottky Barrier,Barrier-enhancement Layer,Dark Current Characteristics
