摘要
本文采用等离子体色散效应和大注入效应，通过ＥＰＷ各向异性腐蚀的方法，在外延硅芯片上刻蚀出脊形单波导，并采用纵向Ｐ＋ｎ结结构，对硅１．３～１．６μｍ电光强度调制器进行了初步研究，在注入电流密度为１．７×１０４Ａ／ｃｍ村时，调制深度为９０％．最后通过有限元法对横向ｐ＋ｎ结大注入进行分析，提出了提高空穴时间利用率的措施．
Abstract By using the plasma dispersion effect and pn junction large injection effect, an all silicon electro-optical waveguide intensity modulator at 1. 3￣1. 6μm is investigated. A rib waveguide is formed in eptaxial silicon wafer by using anistropic etching with EPW( Ethylenediamine-Pyrocatechol-W solution, and the Si vertically injecting electro-optical modulator is fabricated by doping boron on the rib waveguide. its modulating depth is 90% at 17kA/cm2 injecting current. And finally, the silicon transversely injecting electrooptical waveguide modulator is analysed by using finite element method, and a measure for improvement of holes time utilization factor is put forward.
