摘要
本文通过分析In_(0.53)Ga_(0.47)As材料的电子漂移速度与电场的非线性关系,研究了In_(0.53)Ga_(0.47)As金属-半导体-金属光电探测器(MSM-PD)的光电响应与指状电极间距离、光吸收层杂质浓度及工作电压之间的关系。研究结果表明、光电响应速度存在最佳值。用计算机辅助分析得到的In_(0.53)Ga_(0.47)As MSM-PD的光电响应时间与偏置电压的关系与实验器件实测结果相一致。研究结果为设计高速响应In_(0.53)Ga_(0.47)As MSM-PD及建立器件光电响应模型提供了依据。
Using the method of computer-aided analysis, the transit time through a metal-semiconductor-metalstructure photodetectors (MSM-PD) as a function of applied voltage and otherparameters is calculated. It is shown that a minimum transit time exists in MSM-PD structurebecause of the stronger nonlinear relationship between the electron velocity and electricfieldin In_(0.53)Ga_(0.47)As.The calculated result fits well with the measurement datum of the responsetime of In_(0.53)Ga_(0.47)As MSM-PD against the applied voltage. The results can be used fordesign of high speed response MSM-PD and modelling the response time of metal-semiconductor-metalstructure photodetector.
关键词
金属-半导体
光电探测器
光电响应
Intermetallics
Optoelectronic devices
Photoelectric devices
Photoelectricity
