摘要
本文首次介绍了用低温MOVPE技术,研制成功具有非掺杂InP 肖特基势垒增强层的InCaAs金属-半导体-金属光电探测器(MSM-PD).其暗电流在 1.5伏下小于 60 nA(100 ×100)微米~2;响应时间t_r小于30 ps(6伏).其灵敏度在6 V下为0.42 A/W.
A long-wavelength,low dark current,high-speed In_(0.53)Ga_(0.47)As Metal-Semiconductor-MetalPhotodetector (MSM-P) with undoped InP Schottky barrier-enhancement layer, grown by LP-MOVPE is reported.The 60 nA of dark current (100×100)μm^2 at 1.5V, 30ps of rise time and0.42A/W of responsivity at 6V are obtained.
基金
中国国家自然科学基金会和德国德意志研究联合会的联合资助
