摘要
对Si_3N_4/SiO_2/Si多层膜系统对Ar^+激光的反射率进行了模型计算,设计了各种结构的抗反射条并且用CW—Ar^+激光对两种结构进行了再结晶实验研究。通过实验,确定了最佳的抗反射膜结构和条宽。用这种结构可以很好地将晶界限制在低反射区。实验结果支持了计算模型和设计。在设定的区域(500μm×300μm)范围内可以得到无晶界的条形薄膜(由光刻决定条的位置)。把MOSFET的栅区制作在膜的无晶介条上,测量得到表面电子和空穴迁移率分别为(μ-)_n=630cm^2/V·S·(μ-)_p=143cm^2/V·S;NMOS与PMOS管单位沟道宽度的沟道漏电流分别为I_n=3.3pA/μm,I_p=0.067pA/μm。
Reflectance of Si_3N_4/SiO_2/Si layer has been caculated and the structure of antireflectivestripe has been designed.Two kinds of structure have been studied by CW-Ar^+ laser recrystallizationexperiment,and the better structure has been selected.The experimental resultssupport the caculation and design.Grain boundary free stripe can be obtained in the highreflective area which can be localiged by photolithographic technology. MOSFETS were fabricatedon the area and the average surface mobility (μ-)_n=630cm^2/v·s for electrons,(μ-)_p=143cm^2/v·s for holes and leakage current is about 1pA/μm (channel width).
关键词
抗反射束
SOI技术
激光束
薄膜
Antireflective stripe
SOI
Active area without grain boundary
