摘要
本文描述了一种新奇的SOI技术:中子辐照单晶硅形成半绝缘材料,经激光扫描退火恢复表面层的半导体特性并由此组成了SOI结构.在这个结构上我们制作了n沟MOSFET.本文研究了这种半绝缘层的性质,这种技术的工艺流程和条件以及用这种方法制得的MOS器件的性能.
A novel SOI technique is presented in this paper.Single crystal silicon was irradiated by neutron to form the semi-insulating material.A SOI construction was constituted after the semiconductor feature of surface layer was reconvered by laser annealing.The n chennel MOSFETs were fabricated on the SOI construction.The process and conditions of the fablication are reported and the characteristics of MOSFET and the evaluation of the technique is given.
出处
《华东师范大学学报（自然科学版）》
CAS
CSCD
1991年第1期35-40,共6页
Journal of East China Normal University(Natural Science)
关键词
SOI技术
MOS器件
激光退火
SOI结构
SOI technique MOSFET fabrication technique plasma anodization laser annealing
