摘要
两种行之有效的晶粒间界限制技术:热沉结构和硅槽结构使区熔再结晶SOI实现定域无缺陷,这是采用区熔技术制备SOI的技术关键和难点所在。本文讨论了两种结构限制晶界的机理。
In this paper, such effective techniques as Heat Sink structure and Grooved structure have been proposed to localize grain-boundaries during Zone-Melting -Recrystallization(ZMR).These techniques are the key points of ZMR-SOI technology. The mechanisms of defects localization of the two structures have been reviewed.
出处
《微细加工技术》
1992年第3期21-24,共4页
Microfabrication Technology
